Topics

Focused at the nanoscale, electron and ion beams provide a local probe particularly-suited for investigating  semiconductor microstructures, nanostructures and defects. Instrumental developments and their application for semiconductor characterization are the principal topics of this conference. The core of this meeting is cathodoluminescence (CL) and electron beam-injection current (EBIC) anlysis, but not exclusively and the following topics are included :

Semiconductor characterization methods

    • Electron beam characterization methods: cathodoluminescence, EBIC, TEM, STEM, EBSD, ...

    • Light characterization methods: spatially resolved PL, microRaman, OBIC, ...

    • Scanning Probe Microscopy: STM, AFM and SNOM techniques

    • Ion beams and other microscopy characterization techniques

Application of these and related techniques to the study of

    • Photovoltaic materials and devices

    • Point and extended defects, impurities, interfaces ...

    • Heterostructures, quantum structures, devices ...

    • 2D crystals, nanomaterials, nanowires, nanotubes,...

    • Optical and electronic properties of defects, microstructures and nanostructures

and more generally, any quantitative and analytical aspect of local beam injection assessment of any semiconductor material.